2SK201306 VALMISTEYHTEENVETO, PIIRI, TOIMINNON
Osan nimi: 2SK201306
Valmistaja: Toshiba Semiconductor
Pakkaus:
Kuvaus:
Pins:
Lämpötila: Min °C | Max °C
Koko: KB
- 2SK2010
Very High-Speed Switching Applications - 2SK2011
Very High-Speed Switching Applications - 2SK2012
Very High-Speed Switching Applications - 2SK2013
AUDIO FREQUENCY POWER AMPLIFIER APPLICATION - 2SK201306
CHANNEL TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION - 2SK2013O
TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 1A I(D) | SC-67 - 2SK2013Y
TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 1A I(D) | SC-67 - 2SK2013_06
N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION - 2SK2018
N-channel MOS-FET - 2SK2018-01
- 2SK2018-01L
N-channel MOS-FET - 2SK2018-01S
N-channel MOS-FET - 2SK2019-01
N-channel MOS-FET