2SJ20107 VALMISTEYHTEENVETO, PIIRI, TOIMINNON
Osan nimi: 2SJ20107
Valmistaja: Toshiba Semiconductor
Pakkaus:
Kuvaus:
Pins:
Lämpötila: Min °C | Max °C
Koko: KB
- 2SJ200
CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION) - 2SJ20007
High Power Amplifier Application - 2SJ200O
TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR - 2SJ200Y
TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR - 2SJ200_07
High Power Amplifier Application - 2SJ201
CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATIONS) - 2SJ20107
High-Power Amplifier Application - 2SJ20109
High-Power Amplifier Application - 2SJ201O
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR - 2SJ201Y
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR - 2SJ201_07
High-Power Amplifier Application - 2SJ202
P-CHANNEL SWITCHING - 2SJ202-T1
MOS field effect transistor - 2SJ202-T2
MOS field effect transistor - 2SJ203
Fied Effect Transistor