2SD1160_06 VALMISTEYHTEENVETO, PIIRI, TOIMINNON
Osan nimi: 2SD1160_06
Valmistaja: Toshiba Semiconductor
Pakkaus:
Kuvaus:
Pins:
Lämpötila: Min °C | Max °C
Koko: KB
- 2SD1160
EPITAXIAL TYPE (SWITCHING, SUITABLE MOTOR DRIVER APPLICATIONS) - 2SD116006
Silicon Epitaxial Type Process) - 2SD1160O
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | TO-251AA - 2SD1160Y
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | TO-251AA - 2SD1160_06
Silicon NPN Epitaxial Type (PCT Process) - 2SD1161
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 30MA I(C) | SOT-23 - 2SD1161P4
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 30MA I(C) | SOT-23 - 2SD1161P5
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 30MA I(C) | SOT-23 - 2SD1161P6
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 30MA I(C) | SOT-23 - 2SD1162
Silicon Darlington Power Transistor - 2SD1163
Silicon Triple Diffused - 2SD1163A
Silicon Triple Diffused - 2SD1163|2SD1163A
- 2SD1164
- 2SD1164-Z
SILICON EPITAXIAL TRANSISTOR MP-3