2SC517107 VALMISTEYHTEENVETO, PIIRI, TOIMINNON
Osan nimi: 2SC517107
Valmistaja: Toshiba Semiconductor
Pakkaus:
Kuvaus:
Pins:
Lämpötila: Min °C | Max °C
Koko: KB
- 2SC517
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-37 - 2SC5171
EPITAXIAL TYPE (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS) - 2SC517107
Silicon Epitaxial Type Power Amplifier Applications - 2SC5171_07
Silicon NPN Epitaxial Type Power Amplifier Applications - 2SC5172
SWITCHING REGULATOR HIGH VOLTAGE SWITCHING APPLICATIONS - 2SC517206
Silicon Triple Diffused Type process) Switching Regulator High-Voltage Switching Applications - 2SC5172_06
Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High-Voltage Switching Applications - 2SC5173
HIGH VOLTAGE SWITCHING AMPLIFIER APPLICATIONS - 2SC5174
TOSHIBA TRANSISTOR SILICON EPITAXIAL TYPE - 2SC5175
HIGH CURRENT SWITCHING APPLICATIONS - 2SC5176
HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONCERTER APPLICATIONS - 2SC5176O
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220VAR - 2SC5176Y
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220VAR - 2SC5177
EPITAXIAL SILICON TRANSISTOR MINI-MOLD PACKAGE LOW-NOISE MICROWAVE AMPLIFICATION - 2SC5177-T1
High fT, high gain transistor