2SA2009 VALMISTEYHTEENVETO, PIIRI, TOIMINNON
Osan nimi: 2SA2009
Valmistaja: Panasonic Semiconductor
Pakkaus:
Kuvaus:
Pins:
Lämpötila: Min °C | Max °C
Koko: KB
- 2SA2002
HIGH CURRENT APPLICATION SILICON EPITAXIAL TYPE MICRO(FRAME TYPE) - 2SA2004
Silicon epitaxial planer type - 2SA2005
Audio Amplifier output Velosity Modulation (-160V,-1.5A) - 2SA2006
High-speed Switching Transistor(???????????) - 2SA2007
High-speed Switching Transistor (−60V,−12A) - 2SA2007F
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 12A I(C) | TO-220FN - 2SA2009
Silicon epitaxial planer type - 2SA2009R
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | SC-70 - 2SA2009S
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | SC-70 - 2SA2009T
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | SC-70 - 2SA201
2SA203 - 2SA2010
Silicon epitaxial planer type - 2SA2011
DC/DC Converter Applications - 2SA2012
DC/DC Converter Applications - 2SA2013
DC/DC Converter Applications