2SD2012 VALMISTEYHTEENVETO, PIIRI, TOIMINNON
Osan nimi: 2SD2012
Valmistaja: Toshiba Semiconductor
Pakkaus:
Kuvaus:
Pins:
Lämpötila: Min °C | Max °C
Koko: KB
- 2SD200
TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR HORIZONTAL OUTPUT APPLICATIONS) - 2SD2000
Power Transistors - 2SD2000O
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR - 2SD2000P
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR - 2SD2000Q
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR - 2SD2000R
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR - 2SD2004
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE - 2SD2004N
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP - 2SD2004P
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP - 2SD2004Q
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP - 2SD2005
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED WITH AUTOMATIC PLACEMENT MECHINE - 2SD2005P
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 2A I(C) | SIP - 2SD2005Q
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 2A I(C) | SIP - 2SD2005R
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 2A I(C) | SIP - 2SD2006
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED WITH AUTOMATIC PLACEMENT MECHINE