2SC506507 VALMISTEYHTEENVETO, PIIRI, TOIMINNON
Osan nimi: 2SC506507
Valmistaja: Toshiba Semiconductor
Pakkaus:
Kuvaus:
Pins:
Lämpötila: Min °C | Max °C
Koko: KB
- 2SC506
High Voltage Transistors - 2SC5060
Power transistor (9010V, - 2SC5060M
TRANSISTOR | BJT | DARLINGTON | NPN | 90V V(BR)CEO | 2A I(C) | SIP - 2SC5060N
TRANSISTOR | BJT | DARLINGTON | NPN | 90V V(BR)CEO | 2A I(C) | SIP - 2SC5060TV2M
BJT - 2SC5061
TRANSISTORS TO-92LS - 2SC5061P
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92 - 2SC5061Q
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92 - 2SC5061R
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92 - 2SC5062
TRANSISTORS TO-92LS - 2SC5062Q
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | TO-92 - 2SC5062R
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | TO-92 - 2SC5062S
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | TO-92 - 2SC5063
Silicon triple diffusion planar type(For high breakdown voltage high-speed switching) - 2SC5064
EPITAXIAL PLANAR TYPE (WHF~UHF BAND NOISE AMPLIFIER APPLICATIONS)